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İnstitutun əməkdaşlarının "Electrical Properties of Electrochemically Grown Thin Sb2Se3 Semiconductor Films" məqaləsi Impakt Faktoru 0.771 olan "Inorganic Materials" jurnalında dərc olunmuşdur
Okt 22, 2019 | 14:59 / Mühüm hadisələr
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We have studied some of the electrical properties of thin Sb2Se3 semiconductor films produced by electrodeposition from tartrate electrolytes. The films have been shown to have n-type conductivity. In addition, we have determined some of their semiconductor constants: temperature sensitivity coefficient (B = 15 100 K), temperature coefficient of resistance (α = 0.167 K–1 at 300 K and 0.094 K–1 at 400 K), and band gap (Eg = 1.3 eV). The present results demonstrate that thin Sb2Se3 films can be used in solar cells and thermoelectric elements. 

https://doi.org/10.1134/S0020168519100108

"Electrical Properties of Electrochemically Grown Thin Sb2Se3 Semiconductor Films" V. A. Majidzade, A. Sh. Aliyev, I. Qasimogli, P. H. Quliyev, D. B. Tagiyev

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