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İnstitutun əməkdaşlarının "Electrical Properties of Electrochemically Grown Thin Sb2Se3 Semiconductor Films" məqaləsi Impakt Faktoru 0.771 olan "Inorganic Materials" jurnalında dərc olunmuşdur
Okt 22, 2019 | 14:59 / Mühüm hadisələr
Oxunub 3096 dəfə

We have studied some of the electrical properties of thin Sb2Se3 semiconductor films produced by electrodeposition from tartrate electrolytes. The films have been shown to have n-type conductivity. In addition, we have determined some of their semiconductor constants: temperature sensitivity coefficient (B = 15 100 K), temperature coefficient of resistance (α = 0.167 K–1 at 300 K and 0.094 K–1 at 400 K), and band gap (Eg = 1.3 eV). The present results demonstrate that thin Sb2Se3 films can be used in solar cells and thermoelectric elements. 

https://doi.org/10.1134/S0020168519100108

"Electrical Properties of Electrochemically Grown Thin Sb2Se3 Semiconductor Films" V. A. Majidzade, A. Sh. Aliyev, I. Qasimogli, P. H. Quliyev, D. B. Tagiyev

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