In the "International Journal Of Engineering Sciences & Research Technology" by academician of ANAS D. Tagıyev, D.Sc. E. Salakhova et.al ( IF3,785) monography has been published
Nov 01, 2016 | 12:00 / Important events
Nov 01, 2016 | 12:00 / Important events
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In this monography “Investigation of Voltampere Characteristics of Diodic Structure on Base of Thin Films of Rhenium Chalcogenides” have been investigated static and dynamic volt-ampere characteristics rhenium chalcogenides, obtained by electrochemical way. Studying of dynamic and static voltampere characteristics have been shown, that there is an effect of “switching memory” in the thin covering of rhenium chalcogenides. These coverings can be used as diode in the semi-conductive technique.
“Investigation Of Voltampere Characteristics of Diodic Structure on Base of Thin Films of Rhenium Chalcogenides”. E.A.Salakhova, D.B.Tagiyev, P.E.Kalantarova, N.N.Khankishiyeva. 5(3) March, 2016. p.795-802.
