Вышла статья сотрудников института "Mechanism of AC Charge Transport in TlSb1 – xGaxS2 (x = 0 and 0.03)" с Импакт Фактором (TR) в журнале "Inorganic Materials"
Окт 10, 2017 | 10:30 / Важные события
Прочитано 3967 раз (-а)

The dielectric properties and ac electrical conductivity of TlSb1 – xGaxS2 (x = 0, 0.03) single-crystals have been measured in the frequency range 5 × 104 to 3.5 × 107 Hz. Experimental data on the frequency dispersion of the dielectric coefficients and electrical conductivity of the TlSb1 – xGaxS2 (x = 0, 0.03) single crystals have allowed us to identify the nature of the dielectric loss and the mechanism of charge transport and evaluate parameters of localized states in the band gap. The incorporation of gallium atoms into the crystal lattice of TlSbS2 crystals has been shown to lead to an increase in the Fermi-level density of states and mean hop time and distance.

"Mechanism of AC Charge Transport in TlSb1 – xGaxS2 (x = 0 and 0.03)" S. M. Asadov and S. N. Mustafaeva, "Inorganic Materials" 2017, Vol. 53, No. 12, pp. 1228–1232.