Вышла статья сотрудников института "X-Ray Dosimetric Characteristics of AgGaS2 Single Crystals Grown by Chemical Vapor Transport" с Импакт Фактором (TR) в журнале "Inorganic Materials"
Окт 04, 2017 | 10:00 / Важные события
Окт 04, 2017 | 10:00 / Важные события
Прочитано
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Using chemical vapor transport, we have grown AgGaS2 single crystals possessing large room-temperature X-ray induced conductivity and X-ray sensitivity coefficients, which allows the single crystals to be recommended for use as key elements of various uncooled and very fast X-ray detecting devices and systems.
"X-Ray Dosimetric Characteristics of AgGaS2 Single Crystals Grown by Chemical Vapor Transport" S. M. Asadov, S. N. Mustafaeva, and D. T. Guseinov. "Inorganic Materials"2017, Vol. 53, No. 5, pp. 457–461.
