Thermodynamic, kinetic, and dielectric properties of the As₂S₃–As₂Se₃ system have been investigated. The dependences of the Gibbs free mixing energy on the composition of the As₂S₃–As₂Se₃ system have been calculated. It has been found that glasses based on As₂Se₃ are formed in the concentration range up to 15 mol % As₂S₃. The glass–crystal transition based of As₂Se₃ samples has been studied in the framework of the linear isoconversion model. The As₂S₃–As₂Se₃ phase diagram has been approximated by the thermodynamic method. The concentration-temperature dependences of the Gibbs free energy of alloys (1 – x)As₂Se₃ ⋅ xAs₂S₃ have been constructed. The process of glass–crystal transition in alloys of the As₂S₃–As₂Se₃ system has been analyzed thermodynamically. The temperature dependence of the conductivity of the sample As₂Se₃ at constant current and dielectric properties of 0.8As₂Se₃ ⋅ 0.2As₂S₃ solid solutions in alternating electric fields with a frequency of f = 20–106 Hz have been studied. The nature of dielectric losses has been established, as well as the charge transfer hopping mechanism in the studied samples. The density of localized states near the Fermi level, the energy spread of these states, the average distance, and time of carrier jumps over the forbidden zone have been estimated.

"Thermodynamic and Dielectric Properties of As₂S₃–As₂Se₃" M. M. Asadov, S. N. Mustafaeva, D. B. Tagiyev, and V. F. Lukichev Russian Journal of Inorganic Chemistry, 2020, Vol. 65, No. 5, pp. 733–742.